In this paper, various zinc oxide (ZnO) films are deposited by a versatile and effective dc-reactive facing-target sputtering method. The ratios of Ar to O 2 in the mixture gas are varied from 8:2 to 6:4 at a fixed sputtering pressure of Pa. X-ray diffraction, spectrophotometer and scanning electron microscope are used to study the crystal structure, optical property and surface morphology
ResearchArticle The Photocatalytic Activity and Compact Layer Characteristics of TiO 2 Films Prepared Using Radio Frequency Magnetron Sputtering ,1 ,2 ,2 ,1
An innovative reactive pulse magnetron sputtering (PMS) system allowing to change the pulse mode (unipolar, bipolar or pulse packet) has been used to deposit TiO 2 films at dynamic deposition rates of 850 nm m/min. Photo-induced hydrophilicity and photocatalytic degradation by UV-A illumination were investigated by measuring the decrease of the water angle and the decomposition of
For same photocatalytic layers the photocatalytic activity differs when using different measuring methods, like photoinduced hydrophilicity, photocatalytic decomposition of organic matter or biocidal effect on algae and bacteria. Therefore, optimisation of photocatalytic properties must be conducted according to application.
Photocatalytic TiO2 films were deposited on glass substrates by dc magnetron sputtering using a slightly reduced TiO2?x target (2?x=; conductivity, S cm?1; density, g/cm3).
Titania polycrystalline thin films with high photocatalytic activity were produced by dc reactive magnetron sputtering. X-ray diffraction experiments revealed that the as-deposited films are amorphous and thus unable to deliver an optimum photocatalytic efficiency.
Photocatalytic TiO2 films deposited by rf magnetron sputtering at different oxygen partial pressure Article in Current Applied Physics 10(6) · November 2010 with 14 Reads How we measure reads
The Au/TiO 2 thin films had the best photocatalytic activity when they were UV treated for 1 h, so the UV treatment time was fixed at 1 h. The photocatalytic properties of the prepared thin films were tested by measuring the decomposition of methylene blue in the presence of the thin film under UV irradiation.
High rate deposition of photocatalytic TiO2 films by DC magnetron sputtering using a TiO2-x target High rate deposition of photocatalytic TiO. 2. sputter mode where the target surface was
The backing plate and therefore also the sputter target can be in the form of a flat, rod, cylinder, block or any other desired shape. Additional structural components liquid cooling coils and/or a larger coolant reservoir and/or complex flanges or other mechanical or electrical structures can also be attached.
Is it necessary to use a metallic(copper) back plate for RF sputtering target for non Thin Film Preparation. Share A special graphite paper under the target improves the thermal . A silicon dioxide target is in use without copper back plate. Innovative PVD layers and the latest PVD coating technology [ Innovative
Materions backing plates used in the sputtering process create a quality thin film electrical between a sputtering target and backing plate; Permit good supplies Copper, Copper Alloys, Aluminum and Molybdenum backing plates.
Provides all metal bonding to affix sputtering targets to backing plates for systems Backing plates are typically produced from OFE copper, non-magnetic diffusion barrier and wetting layers to the target and backing plates. After the application of this thin film composite, a specially designed solder is Email Address.
Angstrom Sciences provides a variety of backing plates designed for our Backing plates used in the sputtering process are essential to creating a quality thin film deposition for your copper-chromium) for planar, circular and cylindrical sputtering targets, Airco/BOCCT HRC 517, OFHC Copper, $2,, Contact ASI.
Thin Film Systems. Industries. LED Optics UHV/Synchrotron Electronics The target is in intimate with the conductive solder layer which draws the heat The copper backing plate is in with the water cooled gun so the heat is Indium is the preferred method for bonding sputtering targets because it has